A2I20H060N: 1800-2200 MHz, 12 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifiers

TO-270WB-15 and TO-270WBG-15 Package Image
特性
  • Advanced High Performance In-Package Doherty
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
Data Sheets (1)
Name/DescriptionModified Date
A2I20H060N 1800-2200 MHz, 12 W Avg, 28 V Data Sheet (REV 0) PDF (984.8 kB) A2I20H060N15 Feb 2016
Application Notes (4)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN198712 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN197709 Oct 2003
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA00684D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 16 Pins (REV A) PDF (84.9 kB) 98ASA00684D11 Mar 2016
98ASA00630D, TO-WB, 17.53x9.02x2.59, Pitch 3.05, 16 Pins (REV A) PDF (80.2 kB) 98ASA00630D15 Feb 2016
Printed Circuit Boards
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
A2I20H060GNR1Active1800220028486312 @ AVGW-CDMA28.4 @ 184043.81.6InputABLDMOS
A2I20H060NR1Active1800220028486312 @ AVGW-CDMA28.4 @ 184043.81.6InputABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270WB-15G98ASA00684DMPQ - 500 REELPOQ - 500 REELActiveA2I20H060GNR1A2I20H060GNR1.pdf3260
TO-270WB-1598ASA00630DMPQ - 500 REELPOQ - 500 REELActiveA2I20H060NR1A2I20H060NR1.pdf3260
A2I20H060N 1800-2200 MHz, 12 W Avg, 28 V Data Sheet A2I20H060N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
A2I20H060N 1800 MHz PCB DXF file A2I20H060N
A2I20H060N 2100 MHz PCB DXF file A2I20H060N
98ASA00684D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 16 Pins A2I25D012N
A2I20H060GNR1.pdf A2I20H060N
98ASA00630D, TO-WB, 17.53x9.02x2.59, Pitch 3.05, 16 Pins A2I25D012N
A2I20H060NR1.pdf A2I20H060N