A2T20H330W24N: 1880-2025 MHz,55 W平均值,28 V Airfast®LDMOS射频功率晶体管

特性
  • 先进的高性能内部封装Doherty
  • 专为宽瞬时带宽应用而设计
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
OM-1230-4L2L Package Image
数据手册 (1)
名称/描述Modified Date
A2T20H330W04N 1880-2025 MHz, 55 W Avg, 28 V Data Sheet (REV 0) PDF (524.1 kB) A2T20H330W04N [English]08 Sep 2016
应用说明 (2)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA00787D, OMNI, 32.3x10.0x3.81, Pitch 13.72, 7 Pins (REV O) PDF (91.2 kB) 98ASA00787D [English]05 Dec 2014
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
A2T20H330W24NR6Active188020252853.622955 @ AVGW-CDMA15.9 @ 188049.80.26I/OAB, CLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
OM-1230-4L2L98ASA00787DMPQ - 150 REELPOQ - 150 REELActiveA2T20H330W24NR6A2T20H330W24NR6.pdf3260
A2T20H330W04N 1880-2025 MHz, 55 W Avg, 28 V Data Sheet A2T20H330W24N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA00787D, OMNI, 32.3x10.0x3.81, Pitch 13.72, 7 Pins AFT18H357-24N
A2T20H330W24NR6.pdf A2T20H330W24N