A2T20H330W24N: 1880-2025 MHz, 55 W Avg., 28 V Airfast® RF Power LDMOS Transistor

OM-1230-4L2L Package Image
特性
  • Advanced high performance in-package Doherty
  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • RoHS compliant
Data Sheets (1)
Name/DescriptionModified Date
A2T20H330W04N 1880-2025 MHz, 55 W Avg, 28 V Data Sheet (REV 0) PDF (524.1 kB) A2T20H330W04N08 Sep 2016
Application Notes (2)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASA00787D, OMNI, 32.3x10.0x3.81, Pitch 13.72, 7 Pins (REV O) PDF (91.2 kB) 98ASA00787D05 Dec 2014
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
A2T20H330W24NR6Active188020252853.622955 @ AVGW-CDMA15.9 @ 188049.80.26I/OAB, CLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
OM-1230-4L2L98ASA00787DMPQ - 150 REELPOQ - 150 REELActiveA2T20H330W24NR6A2T20H330W24NR6.pdf3260
A2T20H330W04N 1880-2025 MHz, 55 W Avg, 28 V Data Sheet A2T20H330W24N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA00787D, OMNI, 32.3x10.0x3.81, Pitch 13.72, 7 Pins AFT18H357-24N
A2T20H330W24NR6.pdf A2T20H330W24N