AFT20S015N: 1805-2690 MHz 1.5 W平均值,28 V Airfast LDMOS射频功率晶体管

欲了解更多信息和样品供货情况,请与当地恩智浦销售机构或恩智浦授权分销商联系。

特性
  • 增大负栅源电压范围,改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 为Doherty应用进行了优化
  • 符合RoHS规范
TO-270-2, TO-270G-2 Gull Package Image
数据手册 (1)
名称/描述Modified Date
AFT20S015NR1, AFT20S015GNR1 1805-2700 MHz, 1.5 W Avg., 28 V Airfast® RF Power LDMOS Transistors - Data... (REV 1) PDF (841.1 kB) AFT20S015N [English]12 Nov 2013
应用说明 (3)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]12 Mar 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins (REV D) PDF (86.0 kB) 98ASA99301D [English]30 Mar 2016
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A [English]26 Feb 2016
印刷电路板
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
AFT20S015NR1Active10036002842.116.21.5 @ AVGW-CDMA17.6 @ 2170224.2I/OABLDMOS
AFT20S015GNR1Active10036002842.116.21.5 @ AVGW-CDMA17.6 @ 2170224.2I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
TO-270-2 GULL98ASA99301DMPQ - 500 REELPOQ - 500 REELActiveAFT20S015GNR1AFT20S015GNR1.pdf3260
TO-270-298ASH98117AMPQ - 500 REELPOQ - 500 REELActiveAFT20S015NR1AFT20S015NR1.pdf3260
AFT20S015NR1, AFT20S015GNR1 1805-2700 MHz, 1.5 W Avg., 28 V Airfast® RF Power LDMOS Transistors - Data... AFT20S015N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
AFT20S015N 1800 MHz PCB DXF file AFT20S015N
AFT20S015N 2100 MHz Standard Frequency PCB DXF file AFT20S015N
AFT20S015N 2600 MHz PCB DXF file AFT20S015N
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins aft09ms031n
AFT20S015GNR1.pdf AFT20S015N
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
AFT20S015NR1.pdf AFT20S015N