AFT20S015N: 100-3600 MHz 1.5 W Avg., 28 V Airfast® RF Power LDMOS Transistors

TO-270-2, TO-270G-2 Gull Package Image
特性
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
AFT20S015NR1, AFT20S015GNR1 1805-2700 MHz, 1.5 W Avg., 28 V Airfast® RF Power LDMOS Transistors - Data... (REV 1) PDF (841.1 kB) AFT20S015N12 Nov 2013
Application Notes (3)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins (REV D) PDF (86.0 kB) 98ASA99301D30 Mar 2016
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A26 Feb 2016
Printed Circuit Boards
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
AFT20S015NR1Active10036002842.116.21.5 @ AVGW-CDMA17.6 @ 2170224.2I/OABLDMOS
AFT20S015GNR1Active10036002842.116.21.5 @ AVGW-CDMA17.6 @ 2170224.2I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270-2 GULL98ASA99301DMPQ - 500 REELPOQ - 500 REELActiveAFT20S015GNR1AFT20S015GNR1.pdf3260
TO-270-298ASH98117AMPQ - 500 REELPOQ - 500 REELActiveAFT20S015NR1AFT20S015NR1.pdf3260
AFT20S015NR1, AFT20S015GNR1 1805-2700 MHz, 1.5 W Avg., 28 V Airfast® RF Power LDMOS Transistors - Data... AFT20S015N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
AFT20S015N 1800 MHz PCB DXF file AFT20S015N
AFT20S015N 2100 MHz Standard Frequency PCB DXF file AFT20S015N
AFT20S015N 2600 MHz PCB DXF file AFT20S015N
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins aft09ms031n
AFT20S015GNR1.pdf AFT20S015N
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
AFT20S015NR1.pdf AFT20S015N