AFT26P100-4WS: 2496-2690 MHz,22 W平均值,28 V Airfast LDMOS射频功率晶体管

特性
  • 专为宽瞬时带宽应用而设计
  • 增大负栅源电压范围,改善C类放大器运行
  • 可承受极高的输出VSWR和宽带运行条件
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个,32 mm卷带宽度,13英寸卷盘。
NI-780S-4 Image
数据手册 (1)
名称/描述Modified Date
AFT26P100-4WSR3, AFT26P100-4WGSR3 2496-2690 MHz, 22 W Avg., 28 V Airfast® RF Power LDMOS Transistors... (REV 2) PDF (612.6 kB) AFT26P100-4WS [English]13 Mar 2015
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (2)
名称/描述Modified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D [English]15 Aug 2016
98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins (REV C) PDF (47.2 kB) 98ASA00238D [English]26 Feb 2016
支持信息 (1)
名称/描述Modified Date
Airfast® RF Products for TD-LTE Base Stations (REV 0) PDF (4.1 MB) AIRFAST_TD-LTE_TRN_SI [English]01 Jun 2013
印刷电路板
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
AFT26P100-4WGSR3Active249626902849.48722 @ AVGW-CDMA15.3 @ 269043.90.6I/OAB, CLDMOS
AFT26P100-4WSR3Active249626902849.48722 @ AVGW-CDMA15.3 @ 269043.90.6I/OAB, CLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-780S-4 Gull Wing98ASA00238DMPQ - 250 REELPOQ - 250 REELActiveAFT26P100-4WGSR3AFT26P100-4WGSR3.pdf260
NI-780HS-498ASA10718DMPQ - 250 REELPOQ - 250 REELActiveAFT26P100-4WSR3AFT26P100-4WSR3.pdf260
AFT26P100-4WSR3, AFT26P100-4WGSR3 2496-2690 MHz, 22 W Avg., 28 V Airfast® RF Power LDMOS Transistors... AFT26P100-4WS
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Airfast® RF Products for TD-LTE Base Stations AFT26P100-4WS
AFT26P100-4WS 2690 MHz Characterization PCB DXF file AFT26P100-4WS
98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins AFT26P100-4WS
AFT26P100-4WGSR3.pdf AFT26P100-4WS
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
AFT26P100-4WSR3.pdf AFT26P100-4WS