特性
| NI-780S-4 Image |
名称/描述 | Modified Date |
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AFT26P100-4WSR3, AFT26P100-4WGSR3 2496-2690 MHz, 22 W Avg., 28 V Airfast® RF Power LDMOS Transistors... (REV 2) PDF (612.6 kB) AFT26P100-4WS [English] | 13 Mar 2015 |
名称/描述 | Modified Date |
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AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English] | 29 Apr 2014 |
名称/描述 | Modified Date |
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Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English] | 19 Jan 2004 |
名称/描述 | Modified Date |
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RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English] | 26 May 2016 |
名称/描述 | Modified Date |
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98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D [English] | 15 Aug 2016 |
98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins (REV C) PDF (47.2 kB) 98ASA00238D [English] | 26 Feb 2016 |
名称/描述 | Modified Date |
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Airfast® RF Products for TD-LTE Base Stations (REV 0) PDF (4.1 MB) AIRFAST_TD-LTE_TRN_SI [English] | 01 Jun 2013 |
型号 | 状态 | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | 供电电压 (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | 输出功率 (Typ) (W) @ Intermodulation Level at Test Signal | 测试信号 | 功率增益 (Typ) (dB) @ f (MHz) | 效率 (Typ) (%) | 热阻 (Spec)(°C/W) | 匹配 | 类型 | 模具技术 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AFT26P100-4WGSR3 | Active | 2496 | 2690 | 28 | 49.4 | 87 | 22 @ AVG | W-CDMA | 15.3 @ 2690 | 43.9 | 0.6 | I/O | AB, C | LDMOS |
AFT26P100-4WSR3 | Active | 2496 | 2690 | 28 | 49.4 | 87 | 22 @ AVG | W-CDMA | 15.3 @ 2690 | 43.9 | 0.6 | I/O | AB, C | LDMOS |
封装说明 | Outline Version | 包装 | 产品状态 | 部件编号 | 化学成分 | RoHS / Pb Free中国RoHS查询 | PPT (°C) |
---|---|---|---|---|---|---|---|
NI-780S-4 Gull Wing | 98ASA00238D | MPQ - 250 REELPOQ - 250 REEL | Active | AFT26P100-4WGSR3 | AFT26P100-4WGSR3.pdf | 260 | |
NI-780HS-4 | 98ASA10718D | MPQ - 250 REELPOQ - 250 REEL | Active | AFT26P100-4WSR3 | AFT26P100-4WSR3.pdf | 260 |