AFT26P100-4WS: 2496-2690 MHz, 22 W Avg., 28 V Airfast® RF Power LDMOS Transistors
RF ISOs NI-780S-4L NI-780GS-4L Package Image
特性
- Designed for Wide Instantaneous Bandwidth Applications
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| AFT26P100-4WSR3, AFT26P100-4WGSR3 2496-2690 MHz, 22 W Avg., 28 V Airfast® RF Power LDMOS Transistors... (REV 2) PDF (612.6 kB) AFT26P100-4WS | 13 Mar 2015 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D | 15 Aug 2016 |
| 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins (REV C) PDF (47.2 kB) 98ASA00238D | 26 Feb 2016 |
Supporting Information (1)
| Name/Description | Modified Date |
|---|---|
| Airfast® RF Products for TD-LTE Base Stations (REV 0) PDF (4.1 MB) AIRFAST_TD-LTE_TRN_SI | 01 Jun 2013 |
Printed Circuit Boards
- AFT26P100-4WS 2690 MHz Characterization PCB DXF file (REV 1) ZIP AFT26P100_4WS_CHAR_PCB 5/28/2013
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AFT26P100-4WGSR3 | Active | 2496 | 2690 | 28 | 49.4 | 87 | 22 @ AVG | W-CDMA | 15.3 @ 2690 | 43.9 | 0.6 | I/O | AB, C | LDMOS |
| AFT26P100-4WSR3 | Active | 2496 | 2690 | 28 | 49.4 | 87 | 22 @ AVG | W-CDMA | 15.3 @ 2690 | 43.9 | 0.6 | I/O | AB, C | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780S-4 Gull Wing | 98ASA00238D | MPQ - 250 REELPOQ - 250 REEL | Active | AFT26P100-4WGSR3 | AFT26P100-4WGSR3.pdf |   | 260 |
| NI-780HS-4 | 98ASA10718D | MPQ - 250 REELPOQ - 250 REEL | Active | AFT26P100-4WSR3 | AFT26P100-4WSR3.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- Airfast® RF Products for TD-LTE Base Stations AFT26P100-4WS
- AFT26P100-4WS 2690 MHz Characterization PCB DXF file AFT26P100-4WS
- 98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins AFT26P100-4WS
- AFT26P100-4WGSR3.pdf AFT26P100-4WS
- 98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
- AFT26P100-4WSR3.pdf AFT26P100-4WS
