MD8IC970N: 850-940 MHz，35 W平均值，28 V LDMOS宽带射频集成功率放大器 _ BDTIC 中国领先电子元器件代理商

MD8IC970N: 850-940 MHz，35 W平均值，28 V LDMOS宽带射频集成功率放大器

特性

典型的双频性能：VDD1 = 28 V，VDD2 = 25 V，IDQ1(A+B) = 60 mA，IDQ2(A+B) = 550 mA，输出功率 = 35 W平均值频率 Gps(dB) 功率附加效率(%) IMD(dBc) 850 MHz30.640.1–30.5 900 MHz31.942.4–31.0 940 MHz32.642.1–31.3
在32 Vdc，940 MHz，137 W连续波输出功率(输入与额定输出功率相比3dB过驱)时，能处理10：1 VSWR，旨在增强耐用性
1 dB压缩点时的典型输出功率 ≃ 79 W连续波
提供串联等效大信号阻抗参数和共源S参数
片上预匹配片上稳定性
集成静态电流温度补偿，具有启用/禁用功能
集成的ESD保护
可耐225°C高温的塑料封装
符合RoHS规范
采用盘卷包装。R1后缀 = 500个，44 mm卷带宽度，13英寸卷盘。

TO-270 WBL-16, TO-270 WBL-16 Gull Package Image

数据手册 (1)

名称/描述	Modified Date
MD8IC970NR1, MD8IC970GNR1 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers (REV 2) PDF (519.2 kB) MD8IC970N [English]	05 May 2011

应用说明 (3)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]	12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]	09 Oct 2003

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

白皮书 (1)

名称/描述	Modified Date
Advances in Airfast® RFICs White Paper (REV 0) PDF (149.2 kB) AIRFASTWBFWP [English]	15 May 2015

封装信息 (2)

名称/描述	Modified Date
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins (REV E) PDF (77.7 kB) 98ASA10739D [English]	18 Mar 2016
98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins (REV E) PDF (82.7 kB) 98ASA10740D [English]	18 Mar 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MD8IC970NR1	Active		850	940	28	49	79	35 @ AVG	2-Tone	32.6 @ 940	42.1	0.6	I/O	AB	LDMOS
MD8IC970GNR1	Active		850	940	28	49	79	35 @ AVG	2-Tone	32.6 @ 940	42.1	0.6	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	MSL	PPT (°C)
TO-270 WBL 16 PLASTIC	98ASA10739D	MPQ - 500 REELPOQ - 500 REEL	Active	MD8IC970NR1	MD8IC970NR1.pdf		3	260
TO-270-WBL 16 GULLWG PLS	98ASA10740D	MPQ - 500 REELPOQ - 500 REEL	Active	MD8IC970GNR1	MD8IC970GNR1.pdf		3	260

MD8IC970NR1, MD8IC970GNR1 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers MD8IC970N

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

Advances in Airfast® RFICs White Paper MW7IC2725N

98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins MMRF2007N

MD8IC970NR1.pdf MD8IC970N

98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins MMRF2007N

MD8IC970GNR1.pdf MD8IC970N

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