MD8IC970N: 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers

TO-270 WBL-16, TO-270 WBL-16 Gull Package Image
特性
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • On-Chip Prematching. On-Chip Stabilization.
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MD8IC970NR1, MD8IC970GNR1 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers (REV 2) PDF (519.2 kB) MD8IC970N05 May 2011
Application Notes (3)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN198712 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN197709 Oct 2003
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
Advances in Airfast® RFICs White Paper (REV 0) PDF (149.2 kB) AIRFASTWBFWP15 May 2015
Package Information (2)
Name/DescriptionModified Date
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins (REV E) PDF (77.7 kB) 98ASA10739D18 Mar 2016
98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins (REV E) PDF (82.7 kB) 98ASA10740D18 Mar 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MD8IC970NR1Active85094028497935 @ AVG2-Tone32.6 @ 94042.10.6I/OABLDMOS
MD8IC970GNR1Active85094028497935 @ AVG2-Tone32.6 @ 94042.10.6I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270 WBL 16 PLASTIC98ASA10739DMPQ - 500 REELPOQ - 500 REELActiveMD8IC970NR1MD8IC970NR1.pdf3260
TO-270-WBL 16 GULLWG PLS98ASA10740DMPQ - 500 REELPOQ - 500 REELActiveMD8IC970GNR1MD8IC970GNR1.pdf3260
MD8IC970NR1, MD8IC970GNR1 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers MD8IC970N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Advances in Airfast® RFICs White Paper MW7IC2725N
98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins MMRF2007N
MD8IC970NR1.pdf MD8IC970N
98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins MMRF2007N
MD8IC970GNR1.pdf MD8IC970N