MRF6V14300H: 1400 MHz，330 W，50 V脉冲射频功率LDMOS _ BDTIC 中国领先电子元器件代理商

MRF6V14300H: 1400 MHz，330 W，50 V脉冲射频功率LDMOS

特性

典型脉冲性能：VDD = 50 V，IDQ = 150 mA，输出功率 = 330 W峰值(39.6 W平均值)，f = 1400 MHz，脉冲宽度 = 300 µsec，占空比 = 12% 功率增益：18 dB 漏极效率：60.5%
在50 Vdc，1400 MHz，300 W峰值功率时，能承受5:1 VSWR
提供串联等效大信号阻抗参数
内部匹配，简便易用
工作电压最高可达50 VDD
集成的ESD保护
增大负栅源电压范围，改善C类放大器运行
符合RoHS规范
采用盘卷包装。R3后缀 = 250个，56 mm卷带宽度，13英寸卷盘。

NI-780, NI-780S Package Image

数据手册 (1)

名称/描述	Modified Date
MRF6V14300HR3, MRF6V14300HSR3 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs (REV 3) PDF (652.9 kB) MRF6V14300H [English]	28 Apr 2010

应用说明 (1)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

手册 (1)

名称/描述	Modified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR1608 [English]	04 Sep 2015

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

白皮书 (1)

名称/描述	Modified Date
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP [English]	08 Sep 2011

封装信息 (2)

名称/描述	Modified Date
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C [English]	22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C [English]	22 Mar 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF6V14300HR5	Active		1200	1400	50	55.2	330	330 @ Peak	Pulse	18 @ 1400	60.5	0.13	I/O	AB	LDMOS
MRF6V14300HSR5	Active		1200	1400	50	55.2	330	330 @ Peak	Pulse	18 @ 1400	60.5	0.13	I/O	AB	LDMOS
MRF6V14300HR3	No Longer Manufactured		1200	1400	50	55.2	330	330 @ Peak	Pulse	18 @ 1400	60.5	0.13	I/O	AB	LDMOS
MRF6V14300HSR3	No Longer Manufactured		1200	1400	50	55.2	330	330 @ Peak	Pulse	18 @ 1400	60.5	0.13	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-780	98ASB15607C	MPQ - 50 REELPOQ - 50 BOX	Active	MRF6V14300HR5	MRF6V14300HR5.pdf		260
NI-780	98ASB15607C		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF6V14300HR3	MRF6V14300HR3.pdf		260
NI-780S	98ASB16718C	MPQ - 50 REELPOQ - 50 BOX	Active	MRF6V14300HSR5	MRF6V14300HSR5.pdf		260
NI-780S	98ASB16718C		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF6V14300HSR3	MRF6V14300HSR3.pdf		260

MRF6V14300HR3, MRF6V14300HSR3 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs mrf6v14300h

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Solutions for Commercial Aerospace mrfe6vs25n

RF Products Selector Guide MMT20303H

50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h

98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H

MRF6V14300HR5.pdf MRF6V14300H

MRF6V14300HR3.pdf MRF6V14300H

98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H

MRF6V14300HSR5.pdf MRF6V14300H

MRF6V14300HSR3.pdf MRF6V14300H

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