MRF6V14300H: 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

NI-780, NI-780S Package Image
特性
  • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 µsec, Duty Cycle = 12% Power Gain: 18 dB Drain Efficiency: 60.5%
  • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 300 Watts Peak Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF6V14300HR3, MRF6V14300HSR3 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs (REV 3) PDF (652.9 kB) MRF6V14300H28 Apr 2010
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR160804 Sep 2015
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP08 Sep 2011
Package Information (2)
Name/DescriptionModified Date
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C22 Mar 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF6V14300HR5Active120014005055.2330330 @ PeakPulse18 @ 140060.50.13I/OABLDMOS
MRF6V14300HSR5Active120014005055.2330330 @ PeakPulse18 @ 140060.50.13I/OABLDMOS
MRF6V14300HR3No Longer Manufactured120014005055.2330330 @ PeakPulse18 @ 140060.50.13I/OABLDMOS
MRF6V14300HSR3No Longer Manufactured120014005055.2330330 @ PeakPulse18 @ 140060.50.13I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-78098ASB15607CMPQ - 50 REELPOQ - 50 BOXActiveMRF6V14300HR5MRF6V14300HR5.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6V14300HR3MRF6V14300HR3.pdf260
NI-780S98ASB16718CMPQ - 50 REELPOQ - 50 BOXActiveMRF6V14300HSR5MRF6V14300HSR5.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF6V14300HSR3MRF6V14300HSR3.pdf260
MRF6V14300HR3, MRF6V14300HSR3 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs mrf6v14300h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Solutions for Commercial Aerospace mrfe6vs25n
RF Products Selector Guide MMT20303H
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
MRF6V14300HR5.pdf MRF6V14300H
MRF6V14300HR3.pdf MRF6V14300H
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
MRF6V14300HSR5.pdf MRF6V14300H
MRF6V14300HSR3.pdf MRF6V14300H