MRF6VP2600H: 2-500 MHz,600 W,50 V宽带射频功率LDMOS

特性
  • 典型DVB-T OFDM性能:VDD = 50 V,IDQ = 2600 mA,平均输出功率 = 125 W,f = 225 MHz,信道带宽 = 7.61 MHz,输入信号PAR = 9.3 dB @ 0.01% CCDF。 功率增益:25 dB 漏极效率:28.5% 4 MHz偏移时的ACPR:–61 dBc @ 4 kH带宽
  • 典型脉冲性能:VDD = 50 V,IDQ = 2600 mA,峰值输出功率 = 600 W,f = 225 MHz,脉冲宽度 = 100 µsec,占空比 = 20% 功率增益:25.3 dB 漏极效率:59%
  • 在50 Vdc,225 MHz,600 W峰值功率,脉冲宽度 = 100 µsec,占空比 = 20%时,能承受10:1 VSWR
  • 提供串联等效大信号阻抗参数
  • 能进行充分冷却的连续波操作功能
  • 工作电压最高可达50 VDD
  • 集成的ESD保护
  • 专为推挽操作而设计
  • 增大负栅源电压范围,改善C类放大器运行
  • 符合RoHS规范
  • 采用盘卷包装。R6后缀 = 150个,56 mm卷带宽度,13英寸卷盘。
NI-1230 Package Image
数据手册 (1)
名称/描述Modified Date
MRF6VP2600HR6 2-500 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power MOSFET (REV 5.1) PDF (1.5 MB) MRF6VP2600H [English]09 Jul 2010
应用说明 (1)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
手册 (1)
名称/描述Modified Date
Broadcast Solutions (REV 5) PDF (818.6 kB) BR1607 [English]08 Sep 2011
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
白皮书 (1)
名称/描述Modified Date
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP [English]08 Sep 2011
封装信息 (1)
名称/描述Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C [English]05 Apr 2016
订购信息
型号状态状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
MRF6VP2600HR5Active25005057.8600125 @ AVGOFDM25 @ 22528.50.2UnmatchedABLDMOS
MRF6VP2600HR6Active25005057.8600125 @ AVGOFDM25 @ 22528.50.2UnmatchedABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询PPT (°C)
NI-123098ASB16977CMPQ - 150 REELPOQ - 150 REELActiveMRF6VP2600HR6MRF6VP2600HR6.pdf260
MPQ - 50 REELPOQ - 50 BOXActiveMRF6VP2600HR5MRF6VP2600HR5.pdf260
MRF6VP2600HR6 2-500 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power MOSFET mrf6vp2600h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
Broadcast Solutions mrfe6vp8600h
RF Products Selector Guide MMT20303H
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF6VP2600HR6.pdf MRF6VP2600H
MRF6VP2600HR5.pdf MRF6VP2600H