MRF6VP2600H: 2-500 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power MOSFET

NI-1230 Package Image
特性
  • Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF. Power Gain: 25 dB Drain Efficiency: 28.5% ACPR @ 4 MHz Offset: –61 dBc @ 4 kHz Bandwidth
  • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 µsec, Duty Cycle = 20% Power Gain: 25.3 dB Drain Efficiency: 59%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 µsec, Duty Cycle = 20%
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • CW Operation Capability with Adequate Cooling
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF6VP2600HR6 2-500 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power MOSFET (REV 5.1) PDF (1.5 MB) MRF6VP2600H09 Jul 2010
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
Broadcast Solutions (REV 5) PDF (818.6 kB) BR160708 Sep 2011
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP08 Sep 2011
Package Information (1)
Name/DescriptionModified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C05 Apr 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF6VP2600HR5Active25005057.8600125 @ AVGOFDM25 @ 22528.50.2UnmatchedABLDMOS
MRF6VP2600HR6Not Recommended for New Design25005057.8600125 @ AVGOFDM25 @ 22528.50.2UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-123098ASB16977CMPQ - 50 REELPOQ - 50 BOXActiveMRF6VP2600HR5MRF6VP2600HR5.pdf260
MPQ - 150 REELPOQ - 150 REELNot Recommended for New DesignMRF6VP2600HR6MRF6VP2600HR6.pdf260
MRF6VP2600HR6 2-500 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power MOSFET mrf6vp2600h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
Broadcast Solutions mrfe6vp8600h
RF Products Selector Guide MMT20303H
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF6VP2600HR6.pdf MRF6VP2600H
MRF6VP2600HR5.pdf MRF6VP2600H