MRF8P29300H: 2700-2900 MHz，320 W，30 V横向N信道宽带射频功率MOSFET _ BDTIC 中国领先电子元器件代理商

MRF8P29300H: 2700-2900 MHz，320 W，30 V横向N信道宽带射频功率MOSFET

特性

典型脉冲性能：VDD = 30 V，IDQ = 100 mA 信号类型输出功率(W) f(MHz) Gps(dB) ηD(%) IRL(dB) 脉冲(100 µsec，10%占空比) 320峰值 2900 13.3 50.5 –17
在32 Vdc，2900 MHz，320 W连续波峰值功率，300 µsec，10%空占比(3 dB过驱额定输出功率)时，能承受10:1 VSWR
提供串联等效大信号阻抗参数
内部匹配，简便易用
工作电压最高可达32 VDD
集成的ESD保护
专为推挽操作而设计
增大负栅源电压范围，改善C类放大器运行
符合RoHS规范
采用盘卷包装。R6后缀 = 150个，56 mm卷带宽度，13英寸卷盘。

NI-1230H-4S, NI-1230S-4S Product Images

数据手册 (1)

名称/描述	Modified Date
MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs (REV 0) PDF (1.0 MB) MRF8P29300H [English]	24 Feb 2011

应用说明 (1)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

手册 (1)

名称/描述	Modified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR1608 [English]	04 Sep 2015

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C [English]	05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C [English]	23 Feb 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF8P29300HSR6	Active		2700	2900	30	55.1	320	320 @ Peak	Pulse	13.3 @ 2900	50.5	0.06	Unmatched	AB	LDMOS
MRF8P29300HR6	Active		2700	2900	30	55.1	320	320 @ Peak	Pulse	13.3 @ 2900	50.5	0.06	Unmatched	AB	LDMOS
MRF8P29300HR5	No Longer Manufactured		2700	2900	30	55.1	320	320 @ Peak	Pulse	13.3 @ 2900	50.5	0.06	Unmatched	AB	LDMOS
MRF8P29300HSR5	No Longer Manufactured		2700	2900	30	55.1	320	320 @ Peak	Pulse	13.3 @ 2900	50.5	0.06	Unmatched	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-1230	98ASB16977C	MPQ - 150 REELPOQ - 150 REEL	Active	MRF8P29300HR6	MRF8P29300HR6.pdf		260
NI-1230	98ASB16977C		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF8P29300HR5	MRF8P29300HR5.pdf		260
NI-1230S	98ARB18247C	MPQ - 150 REELPOQ - 150 REEL	Active	MRF8P29300HSR6	MRF8P29300HSR6.pdf		260
NI-1230S	98ARB18247C		No Longer Manufactured	MRF8P29300HSR5	MRF8P29300HSR5.pdf		260

MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs mrf8p29300h

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Solutions for Commercial Aerospace mrfe6vs25n

RF Products Selector Guide MMT20303H

98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H

MRF8P29300HR6.pdf MRF8P29300H

MRF8P29300HR5.pdf MRF8P29300H

98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H

MRF8P29300HSR6.pdf MRF8P29300H

MRF8P29300HSR5.pdf MRF8P29300H

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