MRF8P29300H: 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs

NI-1230H-4S, NI-1230S-4S Product Images
特性
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.
Data Sheets (1)
Name/DescriptionModified Date
MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs (REV 0) PDF (1.0 MB) MRF8P29300H24 Feb 2011
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR160804 Sep 2015
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C23 Feb 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF8P29300HSR6Active270029003055.1320320 @ PeakPulse13.3 @ 290050.50.06UnmatchedABLDMOS
MRF8P29300HR6Active270029003055.1320320 @ PeakPulse13.3 @ 290050.50.06UnmatchedABLDMOS
MRF8P29300HR5No Longer Manufactured270029003055.1320320 @ PeakPulse13.3 @ 290050.50.06UnmatchedABLDMOS
MRF8P29300HSR5No Longer Manufactured270029003055.1320320 @ PeakPulse13.3 @ 290050.50.06UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-123098ASB16977CMPQ - 150 REELPOQ - 150 REELActiveMRF8P29300HR6MRF8P29300HR6.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8P29300HR5MRF8P29300HR5.pdf260
NI-1230S98ARB18247CMPQ - 150 REELPOQ - 150 REELActiveMRF8P29300HSR6MRF8P29300HSR6.pdf260
No Longer ManufacturedMRF8P29300HSR5MRF8P29300HSR5.pdf260
MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs mrf8p29300h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Solutions for Commercial Aerospace mrfe6vs25n
RF Products Selector Guide MMT20303H
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF8P29300HR6.pdf MRF8P29300H
MRF8P29300HR5.pdf MRF8P29300H
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF8P29300HSR6.pdf MRF8P29300H
MRF8P29300HSR5.pdf MRF8P29300H