MRF8S18210WHS: 1805 MHz-1995 MHz，50 W平均值，30 V单载波W-CDMA横向N信道射频功率MOSFET _ BDTIC 中国领先电子元器件代理商

MRF8S18210WHS: 1805 MHz-1995 MHz，50 W平均值，30 V单载波W-CDMA横向N信道射频功率MOSFET

特性

专为宽瞬时带宽应用而设计。
专为需要40 MHz信号带宽的宽频应用而设计
100%经过PAR测试，可保证输出功率能力
提供串联等效大信号阻抗参数和共源S参数
内部匹配，简便易用
集成的ESD保护
增大负栅源电压范围，改善C类放大器运行
专为数字预失真纠错系统而设计
为Doherty应用进行了优化
符合RoHS规范
采用盘卷包装。R3后缀 = 250个，56 mm卷带宽度，13英寸卷盘。

NI-880XS-2, NI-880XS-2 Gull Package Image

数据手册 (1)

名称/描述	Modified Date
MRF8S18210WHSR3, MRF8S18210WGHSR3 1805 MHz - 1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 0) PDF (769.1 kB) MRF8S18210WHS [English]	05 Apr 2012

应用说明 (1)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASA00325D, NI-C, 23.11x9.78x3.75, Pitch 0.45, 3 Pins (REV A) PDF (42.8 kB) 98ASA00325D [English]	26 Feb 2016
98ASA00456D, NI-C, 23.11x9.78x3.94, Pitch 9.27, 3 Pins (REV A) PDF (48.3 kB) 98ASA00456D [English]	15 Feb 2016

订购信息

型号	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF8S18210WGHSR3	Active	1805	1995	30	53.2	210	50 @ AVG	W-CDMA	17.8 @ 1930	29.2	0.48	I/O	AB	LDMOS
MRF8S18210WHSR3	Active	1805	1995	30	53.2	210	50 @ AVG	W-CDMA	17.8 @ 1930	29.2	0.48	I/O	AB	LDMOS
MRF8S18210WHSR5	No Longer Manufactured	1805	1995	30	53.2	210	50 @ AVG	W-CDMA	17.8 @ 1930	29.2	0.48	I/O	AB	LDMOS
MRF8S18210WGHSR5	No Longer Manufactured	1805	1995	30	53.2	210	50 @ AVG	W-CDMA	17.8 @ 1930	29.2	0.48	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-880XS-2 GULL	98ASA00456D	MPQ - 250 REELPOQ - 250 REEL	Active	MRF8S18210WGHSR3	MRF8S18210WGHSR3.pdf		260
NI-880XS-2 GULL	98ASA00456D	MPQ - 50 REELPOQ - 50 REEL	Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF8S18210WGHSR5	MRF8S18210WGHSR5.pdf		260
NI-880XS-2	98ASA00325D	MPQ - 250 REELPOQ - 250 REEL	Active	MRF8S18210WHSR3	MRF8S18210WHSR3.pdf		260
NI-880XS-2	98ASA00325D	MPQ - 50 REELPOQ - 50 REEL	Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF8S18210WHSR5	MRF8S18210WHSR5.pdf		260

MRF8S18210WHSR3, MRF8S18210WGHSR3 1805 MHz - 1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs MRF8S18210WHS

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

98ASA00456D, NI-C, 23.11x9.78x3.94, Pitch 9.27, 3 Pins MRF8S18210WHS

MRF8S18210WGHSR3.pdf MRF8S18210WHS

MRF8S18210WGHSR5.pdf MRF8S18210WHS

98ASA00325D, NI-C, 23.11x9.78x3.75, Pitch 0.45, 3 Pins MRF8S18210WHS

MRF8S18210WHSR3.pdf MRF8S18210WHS

MRF8S18210WHSR5.pdf MRF8S18210WHS

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