MRF8S18210WHS: 1805-1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

NI-880XS-2, NI-880XS-2 Gull Package Image
特性
  • Designed for Wide Instantaneous Bandwidth Applications.
  • Designed for Wideband Applications that Require 40 MHz Signal Bandwidth
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF8S18210WHSR3, MRF8S18210WGHSR3 1805 MHz - 1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 0) PDF (769.1 kB) MRF8S18210WHS05 Apr 2012
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA00325D, NI-C, 23.11x9.78x3.75, Pitch 0.45, 3 Pins (REV A) PDF (42.8 kB) 98ASA00325D26 Feb 2016
98ASA00456D, NI-C, 23.11x9.78x3.94, Pitch 9.27, 3 Pins (REV A) PDF (48.3 kB) 98ASA00456D15 Feb 2016
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF8S18210WGHSR3Active180519953053.221050 @ AVGW-CDMA17.8 @ 193029.20.48I/OABLDMOS
MRF8S18210WHSR3Active180519953053.221050 @ AVGW-CDMA17.8 @ 193029.20.48I/OABLDMOS
MRF8S18210WHSR5No Longer Manufactured180519953053.221050 @ AVGW-CDMA17.8 @ 193029.20.48I/OABLDMOS
MRF8S18210WGHSR5No Longer Manufactured180519953053.221050 @ AVGW-CDMA17.8 @ 193029.20.48I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-880XS-2 GULL98ASA00456DMPQ - 250 REELPOQ - 250 REELActiveMRF8S18210WGHSR3MRF8S18210WGHSR3.pdf260
MPQ - 50 REELPOQ - 50 REELMigration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8S18210WGHSR5MRF8S18210WGHSR5.pdf260
NI-880XS-298ASA00325DMPQ - 250 REELPOQ - 250 REELActiveMRF8S18210WHSR3MRF8S18210WHSR3.pdf260
MPQ - 50 REELPOQ - 50 REELMigration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8S18210WHSR5MRF8S18210WHSR5.pdf260
MRF8S18210WHSR3, MRF8S18210WGHSR3 1805 MHz - 1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs MRF8S18210WHS
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA00456D, NI-C, 23.11x9.78x3.94, Pitch 9.27, 3 Pins MRF8S18210WHS
MRF8S18210WGHSR3.pdf MRF8S18210WHS
MRF8S18210WGHSR5.pdf MRF8S18210WHS
98ASA00325D, NI-C, 23.11x9.78x3.75, Pitch 0.45, 3 Pins MRF8S18210WHS
MRF8S18210WHSR3.pdf MRF8S18210WHS
MRF8S18210WHSR5.pdf MRF8S18210WHS