MRF8S18260H: 1805-1880 MHz，74 W平均值，30 V单载波W-CDMA横向N信道射频功率MOSFET _ BDTIC 中国领先电子元器件代理商

MRF8S18260H: 1805-1880 MHz，74 W平均值，30 V单载波W-CDMA横向N信道射频功率MOSFET

特性

典型单载波W-CDMA性能：VDD = 30 V，IDQ = 1600 mA，平均输出功率 = 74 W，IQ幅度削峰，信道带宽 = 3.84 MHz，输入信号PAR = 7.5 dB @ 0.01% CCDF。频率 Gps(dB) ηD(%) 输出PAR(dB) ACPR(dBc) 1805 MHz17.931.66.0–35.0 1840 MHz17.931.96.0–36.0 1880 MHz17.932.55.9–36.0
在32 Vdc，1840 MHz，374 W连续波输出功率(3 dB过驱额定输出功率)时，能承受10:1 VSWR
1 dB压缩点时，典型连续波输出功率≃ 260 W
100%经过PAR测试，可保证输出功率能力
提供串联等效大信号阻抗参数和共源S参数
内部匹配，简便易用
集成的ESD保护
增大负栅源电压范围，改善C类放大器运行
专为数字预失真纠错系统而设计
为Doherty应用进行了优化
符合RoHS规范
采用盘卷包装。R6后缀 = 150个，56 mm卷带宽度，13英寸卷盘。

NI-1230-8, NI-1230S-8 Package Image

数据手册 (1)

名称/描述	Modified Date
MRF8S18260HR6, MRF8S18260HSR6 1805-1880 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 1) PDF (517.3 kB) MRF8S18260H [English]	21 Feb 2012

应用说明 (1)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASA00155D, NI-C, 32.26x10.16x4.45, Pitch 13.72, 9 Pins (REV D) PDF (53.6 kB) 98ASA00155D [English]	12 Jun 2016
98ASA00120D, NI-C, 41.0x10.0x4.0, Pitch 13.72, 9 Pins (REV D) PDF (56.9 kB) 98ASA00120D [English]	26 Feb 2016

订购信息

型号	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF8S18260HSR6	Active	1805	1880	30	54.1	260	74 @ AVG	W-CDMA	17.9 @ 1805	31.6	0.27	I/O	AB	LDMOS
MRF8S18260HR6	No Longer Manufactured	1805	1880	30	54.1	260	74 @ AVG	W-CDMA	17.9 @ 1805	31.6	0.27	I/O	AB	LDMOS
MRF8S18260HR5	No Longer Manufactured	1805	1880	30	53.2	260	74 @ AVG	W-CDMA	17.9 @ 1805	31.6	0.27	I/O	AB	LDMOS
MRF8S18260HSR5	No Longer Manufactured	1805	1880	30	54.1	260	74 @ AVG	W-CDMA	17.9 @ 1805	31.6	0.27	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-1230S-8	98ASA00155D	MPQ - 150 REELPOQ - 150 REEL	Active	MRF8S18260HSR6	MRF8S18260HSR6.pdf		260
NI-1230S-8	98ASA00155D		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF8S18260HSR5	MRF8S18260HSR5.pdf		260
NI1230-8	98ASA00120D	MPQ - 150 REELPOQ - 150 REEL	No Longer Manufactured	MRF8S18260HR6	MRF8S18260HR6.pdf		260
NI1230-8	98ASA00120D		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF8S18260HR5	MRF8S18260HR5.pdf		260

MRF8S18260HR6, MRF8S18260HSR6 1805-1880 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs mrf8s18260h

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

98ASA00155D, NI-C, 32.26x10.16x4.45, Pitch 13.72, 9 Pins mrf8s18260h

MRF8S18260HSR6.pdf MRF8S18260H

MRF8S18260HSR5.pdf MRF8S18260H

98ASA00120D, NI-C, 41.0x10.0x4.0, Pitch 13.72, 9 Pins mrf8s18260h

MRF8S18260HR6.pdf MRF8S18260H

MRF8S18260HR5.pdf MRF8S18260H

©1993 - 2025 BDTIC