MRF8S18260H: 1805-1880 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

NI-1230-8, NI-1230S-8 Package Image
特性
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF8S18260HR6, MRF8S18260HSR6 1805-1880 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 1) PDF (517.3 kB) MRF8S18260H21 Feb 2012
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA00155D, NI-C, 32.26x10.16x4.45, Pitch 13.72, 9 Pins (REV D) PDF (53.6 kB) 98ASA00155D12 Jun 2016
98ASA00120D, NI-C, 41.0x10.0x4.0, Pitch 13.72, 9 Pins (REV D) PDF (56.9 kB) 98ASA00120D26 Feb 2016
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF8S18260HSR6Not Recommended for New Design180518803054.126074 @ AVGW-CDMA17.9 @ 180531.60.27I/OABLDMOS
MRF8S18260HR6No Longer Manufactured180518803054.126074 @ AVGW-CDMA17.9 @ 180531.60.27I/OABLDMOS
MRF8S18260HR5No Longer Manufactured180518803053.226074 @ AVGW-CDMA17.9 @ 180531.60.27I/OABLDMOS
MRF8S18260HSR5No Longer Manufactured180518803054.126074 @ AVGW-CDMA17.9 @ 180531.60.27I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-1230S-898ASA00155DMPQ - 150 REELPOQ - 150 REELNot Recommended for New DesignMRF8S18260HSR6MRF8S18260HSR6.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8S18260HSR5MRF8S18260HSR5.pdf260
NI1230-898ASA00120DMPQ - 150 REELPOQ - 150 REELNo Longer ManufacturedMRF8S18260HR6MRF8S18260HR6.pdf260
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
Migration Complete. No Longer Manufactured. View PCN and Replacement Part
MRF8S18260HR5MRF8S18260HR5.pdf260
MRF8S18260HR6, MRF8S18260HSR6 1805-1880 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs mrf8s18260h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA00155D, NI-C, 32.26x10.16x4.45, Pitch 13.72, 9 Pins mrf8s18260h
MRF8S18260HSR6.pdf MRF8S18260H
MRF8S18260HSR5.pdf MRF8S18260H
98ASA00120D, NI-C, 41.0x10.0x4.0, Pitch 13.72, 9 Pins mrf8s18260h
MRF8S18260HR6.pdf MRF8S18260H
MRF8S18260HR5.pdf MRF8S18260H