PMPB55ENEA: 60 V, N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
sot1220_3d
数据手册 (1)
| 名称/描述 | Modified Date |
|---|---|
| 60 V, N-channel Trench MOSFET (REV 2.0) PDF (344.0 kB) PMPB55ENEA [English] | 06 Jun 2016 |
应用说明 (6)
| 名称/描述 | Modified Date |
|---|---|
| Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English] | 13 Jul 2016 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English] | 22 May 2014 |
| Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English] | 19 May 2014 |
| LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English] | 14 Sep 2012 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English] | 16 Nov 2011 |
| LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English] | 27 Jan 2011 |
选型工具指南 (1)
| 名称/描述 | Modified Date |
|---|---|
| Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English] | 17 Feb 2016 |
封装信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals (REV 1.0) PDF (212.0 kB) SOT1220 [English] | 08 Feb 2016 |
包装 (1)
| 名称/描述 | Modified Date |
|---|---|
| DFN2020MD-6; reel pack; Standard orientation; 12NC ending 115 (REV 2.0) PDF (209.0 kB) SOT1220_115 [English] | 19 Feb 2013 |
支持信息 (2)
| 名称/描述 | Modified Date |
|---|---|
| Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English] | 07 Aug 2015 |
| Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English] | 30 Sep 2013 |
订购信息
| 型号 | 状态 | Package version | Package name | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | RDSon [typ] @ VGS = 10 V (mΩ) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | RDSon [typ] @ VGS = 4.5 V (mΩ) | QG(tot) [typ] (nC) | Ptot [max] (W) | QG(tot) [typ] @ VGS = 10 V (nC) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | ID [max] @ T = 100 °C (A) | IDM [max] (A) | Ciss [typ] (pF) | Coss [typ] (pF) | 日期 | Rth(j-mb) [max] (K/W) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMPB55ENEA | Active | SOT1220 | DFN2020MD-6 | N | 1 | 60 | 56 | 69 | 42 | 4 | 1.2 | 48 | 7.5 | 1.65 | 7.5 | 7.5 | 1.7 | Y | 2.5 | 16 | 435 | 47 | 2016-04-01 | 435 |
封装环保信息
| 产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | EFR | IFR(FIT) | MTBF（小时） | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMPB55ENEA | | SOT1220 | Reflow_Soldering_Profile | Reel 7" Q1/T1 | Active | PMPB55ENEAX (9340 686 22115) | 2G | PMPB55ENEA |    | Always Pb-free | 286.0 | 1.33 | 7.52E8 | 1 | 1 |
- 60 V, N-channel Trench MOSFET pmpb55enea
- Using power MOSFETs in parallel BUK7M12-60E
- LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
- Using RC Thermal Models BUK7M12-60E
- LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
- LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
- LFPAK MOSFET thermal design guide BUK7M12-60E
- Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
- Power MOSFET frequently asked questions and answers BUK7M12-60E
- DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals pmpb55enea
- Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
- DFN2020MD-6; reel pack; Standard orientation; 12NC ending 115 pmpb55enea
- PMPB95ENEA
