PMPB55ENEA: 60 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

sot1220_3d
Data Sheets (1)
Name/DescriptionModified Date
60 V, N-channel Trench MOSFET (REV 2.0) PDF (344.0 kB) PMPB55ENEA06 Jun 2016
Application Notes (6)
Name/DescriptionModified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN1159913 Jul 2016
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN1126119 May 2014
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN1111316 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN1087427 Jan 2011
Selector Guides (1)
Name/DescriptionModified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 7501763117 Feb 2016
Package Information (1)
Name/DescriptionModified Date
DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals (REV 1.0) PDF (212.0 kB) SOT122008 Feb 2016
Packing (1)
Name/DescriptionModified Date
DFN2020MD-6; reel pack; Standard orientation; 12NC ending 115 (REV 2.0) PDF (209.0 kB) SOT1220_11519 Feb 2013
Supporting Information (2)
Name/DescriptionModified Date
Power MOSFET frequently asked questions and answers (REV 2.0) PDF (1.6 MB) TN0000831 Oct 2016
Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE30 Sep 2013
Ordering Information
ProductStatusPackage versionPackage nameChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)RDSon [typ] @ VGS = 10 V (mΩ)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)RDSon [typ] @ VGS = 4.5 V (mΩ)QG(tot) [typ] (nC)Ptot [max] (W)QG(tot) [typ] @ VGS = 10 V (nC)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedID [max] @ T = 100 °C (A)IDM [max] (A)Ciss [typ] (pF)Coss [typ] (pF)DateRth(j-mb) [max] (K/W)
PMPB55ENEAActiveSOT1220DFN2020MD-6N16056694241.2487.51.657.57.51.7Y2.516435472016-04-01435
Package Information
Product IDPackage DescriptionOutline VersionReflow/Wave SolderingPackingProduct StatusPart NumberOrdering code(12NC)MarkingChemical ContentRoHS / Pb Free / RHFLeadFree Conversion DateEFRIFR(FIT)MTBF(hour)MSLMSL LF
PMPB55ENEASOT1220Reflow_Soldering_ProfileReel 7" Q1/T1ActivePMPB55ENEAX (9340 686 22115)2GPMPB55ENEAAlways Pb-free286.01.337.52E811
60 V, N-channel Trench MOSFET pmpb55enea
Using power MOSFETs in parallel BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
Power MOSFET frequently asked questions and answers BUK7M12-60E
DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals pmpb55enea
Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
DFN2020MD-6; reel pack; Standard orientation; 12NC ending 115 pmpb55enea
PMPB95ENEA