PSMN6R3-120ES: N沟道120 V 6.7 mΩ标准电平MOSFET,采用I2PAK封装

标准电平N沟道MOSFET,采用I2PAK封装,额定工作温度为175 °C。该产品设计适用于各种工业、通信及家用电源设备。

SOT226
数据手册 (1)
名称/描述Modified Date
Trench 6 (SOT226) (IMPULSE) (REV 1.1) PDF (253.0 kB) PSMN6R3-120ES [English]27 Feb 2014
应用说明 (6)
名称/描述Modified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
手册 (1)
名称/描述Modified Date
Ultra-reliable LFPAK56 and LFPAK33 (REV 1.0) PDF (4.4 MB) 75017659 [English]18 May 2015
选型工具指南 (2)
名称/描述Modified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]11 Sep 2014
封装信息 (1)
名称/描述Modified Date
plastic single-ended package (I2PAK); TO-262 (REV 1.0) PDF (173.0 kB) SOT226 [English]08 Feb 2016
支持信息 (1)
名称/描述Modified Date
Power MOSFET frequently asked questions and answers (REV 1.0) PDF (1.1 MB) TN00008 [English]07 Aug 2015
SPICE
Thermal model
订购信息
型号状态Package versionPackage nameChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)QGD [typ] (nC)Tj [max] (°C)QG(tot) [typ] (nC)ID [max] (A)Qr [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)VGSth [typ] (V)Automotive qualifiedQG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)Ciss [typ] (pF)Coss [typ] (pF)日期
PSMN6R3-120ESActiveSOT226I2PAKN11206.761.9175207.170264.23N207.1405113845342013-05-02
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHFMSLMSL LF
PSMN6R3-120ESSOT226Horizontal, Rail PackActivePSMN6R3-120ESQ (9340 678 56127)PSMN6R3-120ESPSMN6R3-120ESNANA
Trench 6 (SOT226) (IMPULSE) PSMN6R3-120ES
Using power MOSFETs in parallel BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Ultra-reliable LFPAK56 and LFPAK33 BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
Power MOSFET frequently asked questions and answers BUK7M12-60E
PSMN6R3-120ES Spice model PSMN6R3-120ES
PSMN6R3-120ES Thermal model PSMN6R3-120ES
plastic single-ended package (I2PAK); TO-262 BUK7E8R3-40E
PSMN8R5-100ES