PSMN6R3-120ES: N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK

Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment.

SOT226
Data Sheets (1)
Name/DescriptionModified Date
Trench 6 (SOT226) (IMPULSE) (REV 1.1) PDF (253.0 kB) PSMN6R3-120ES [English]27 Feb 2014
Application Notes (6)
Name/DescriptionModified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 [English]13 Jul 2016
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH [English]22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 [English]19 May 2014
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH [English]14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 [English]16 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 [English]27 Jan 2011
Brochures (1)
Name/DescriptionModified Date
Ultra-reliable LFPAK56 and LFPAK33 (REV 1.0) PDF (4.4 MB) 75017659 [English]18 May 2015
Selector Guides (2)
Name/DescriptionModified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 [English]17 Feb 2016
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler (REV 1.0) PDF (6.2 MB) 75017590 [English]11 Sep 2014
Package Information (1)
Name/DescriptionModified Date
plastic single-ended package (I2PAK); TO-262 (REV 1.0) PDF (173.0 kB) SOT226 [English]08 Feb 2016
Supporting Information (1)
Name/DescriptionModified Date
Power MOSFET frequently asked questions and answers (REV 2.0) PDF (1.6 MB) TN00008 [English]31 Oct 2016
SPICE model
Thermal model
Ordering Information
ProductStatusPackage versionPackage nameChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)QGD [typ] (nC)RDSon [max] @ VGS = 2.5 V (mΩ)QG(tot) [typ] (nC)Tj [max] (°C)ID [max] (A)Qr [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)VGSth [typ] (V)Ptot [max] (W)Automotive qualifiedQG(tot) [typ] @ VGS = 10 V (nC)Ciss [typ] (pF)Coss [typ] (pF)Date
PSMN6R3-120ESActiveSOT226I2PAKN11206.761.9207.117570264.23405N207.1113845342013-05-02
Package Information
Product IDPackage DescriptionOutline VersionReflow/Wave SolderingPackingProduct StatusPart NumberOrdering code(12NC)MarkingChemical ContentRoHS / Pb Free / RHFMSLMSL LF
PSMN6R3-120ESSOT226Horizontal, Rail PackActivePSMN6R3-120ESQ (9340 678 56127)PSMN6R3-120ESPSMN6R3-120ESNANA
Trench 6 (SOT226) (IMPULSE) PSMN6R3-120ES
Using power MOSFETs in parallel BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Ultra-reliable LFPAK56 and LFPAK33 BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
NXP®'s Power MOSFET Selection Guide 2014: Smaller, faster, cooler BSS84AKW
Power MOSFET frequently asked questions and answers BUK7M12-60E
PSMN6R3-120ES Spice model PSMN6R3-120ES
PSMN6R3-120ES Thermal model PSMN6R3-120ES
plastic single-ended package (I2PAK); TO-262 BUK7E8R3-40E
PSMN8R5-100ES