MBRD5H100T4G: Schottky Power Rectifier, Switch-mode, 5.0 A, 100 V
The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
特性- Guardring for Stress Protection
- Low Forward Voltage
- 175°C Operating Junction Temperature
- Epoxy Meets UL 94 V-0 @ 0.125 in
- Short Heat Sink Tab Manufactured - Not Sheared!
- NBRD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MBRD5H100T4G | Active | Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.5 |
| NBRD5H100T4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | 联系BDTIC |
| NBRD5H100T4G-VF01 | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | 联系BDTIC |
订购产品技术参数
| Product | Configuration | VRRM Min (V) | VF Max (V) | IRM Max (µA) | IO(rec) Max (A) | IFSM Max (A) | trr Max (ns) | Cj Max (pF) |
|---|
| MBRD5H100T4G | Single | 100 | 0.71 | 3.5 | 5 | 105 | - | - |
| NBRD5H100T4G | Single | 100 | 0.71 | 3.5 | 5 | 105 | - | - |
| NBRD5H100T4G-VF01 | | | | | | | | |
