MBRD5H100T4G: Schottky Power Rectifier, Switch-mode, 5.0 A, 100 V
The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Features- Guardring for Stress Protection
- Low Forward Voltage
- 175°C Operating Junction Temperature
- Epoxy Meets UL 94 V-0 @ 0.125 in
- Short Heat Sink Tab Manufactured - Not Sheared!
- NBRD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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Simulation Models (4)
Package Drawings (1)
Data Sheets (1)
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| MBRD5H100T4G | Active | Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.5 |
| NBRD5H100T4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | Contact BDTIC |
| NBRD5H100T4G-VF01 | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | Contact BDTIC |
Specifications
| Product | Configuration | VRRM Min (V) | VF Max (V) | IRM Max (µA) | IO(rec) Max (A) | IFSM Max (A) | trr Max (ns) | Cj Max (pF) |
|---|
| MBRD5H100T4G | Single | 100 | 0.71 | 3.5 | 5 | 105 | - | - |
| NBRD5H100T4G | Single | 100 | 0.71 | 3.5 | 5 | 105 | - | - |
| NBRD5H100T4G-VF01 | | | | | | | | |
