NIS5112: Electronic Fuse
The NIS5112 is an integrated switch utilizing a high side N-channel FET driven by an internal charge pump. This switch features a MOSFET which allows for current sensing using inexpensive chip resistors intead of expensive, low impedance current shunts.It is designed to operate in 12 V systems and includes a robust thermal protection circuit.
特性- Integrated Power Device
- Power Device Thermally Protected
- No External Current Shunt Required
- Enable/Timer Pin
- Adjustable Slew Rate for Output Voltage
- 9 V to 18 V Input Range
- 30 mΩ Typical
- Internal Charge Pump
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封装
设计和开发工具 (1)
数据表 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| Electronic Fuse | NIS5112/D (410.0kB) | 9 | |
应用注释 (6)
封装图纸 (1)
仿真模型 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NIS5112D1R2G | Active | Pb-free
Halide free | SOIC-8 | 751-07 | 3 | Tape and Reel | 2500 | $1.32 |
| NIS5112D2R2G | Active | Pb-free
Halide free | SOIC-8 | 751-07 | 3 | Tape and Reel | 2500 | $1.32 |
订购产品技术参数
| Product | Type | VI Max (V) | rDS(on) Max (mΩ) | TSD Typ (°C) | Thyst Typ (°C) |
|---|
| NIS5112D1R2G | Latch Off | 18 | 35 | 135 | 40 |
| NIS5112D2R2G | Auto-Retry | 18 | 35 | 135 | 40 |
