NTBV5605: Power MOSFET -60V, -18.5A, 140 mOhm, Single P-Channel, D2PAK.
Automotive Power MOSFET designed for high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads, this power MOSFET can withstand high energy in the avalanche and commutation modes. The avalanche energy rating is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients. The energy efficient design also offers a drain to source diode with fast recovery time. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- Designed for Low RDS(on)
- Withstands High Energy in Avalanche and Commutation Modes.
- Pb-Free Packages are Available
|
应用- Power Supplies
- PWM Motor Control
- Converters
- Power Management
|
封装
仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| D2PAK 2 LEAD | 418B-04 (35.3kB) | L |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTBV5605T4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | D2PAK-3 | 418B-04 | 1 | Tape and Reel | 800 | $0.5617 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTBV5605T4G | P-Channel | Single | 60 | 20 | 2 | 18.5 | 88 | | 140 | | 13 | | 7 | 140 | 730 | 211 | 67 |
