Automotive Power MOSFET designed for high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads, this power MOSFET can withstand high energy in the avalanche and commutation modes. The avalanche energy rating is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients. The energy efficient design also offers a drain to source diode with fast recovery time. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
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Document Title | Document ID/Size | Revision | Revision Date |
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P Spice Model | NTB5605P.LIB (1.0kB) | 0 | |
Saber Model | NTB5605P.SIN (1.0kB) | 0 | |
Spice 2 Model | NTB5605P.SP2 (1.0kB) | 0 | |
Spice 3 Model | NTB5605P.SP3 (1.0kB) | 0 |
Document Title | Document ID/Size | Revision |
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D2PAK 2 LEAD | 418B-04 (35.3kB) | L |
Document Title | Document ID/Size | Revision | Revision Date |
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Power MOSFET - 60 V, - 18.5 A, P-Channel, D2PAK | NTB5605P/D (138.0kB) | 4 |
产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) | ||
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NTBV5605T4G | Active | AEC Qualified PPAP Capable Pb-free Halide free | Power MOSFET -60V, -18.5A, 140 mOhm, Single P-Channel, D2PAK., Power MOSFET -60V, -18.5A, 140 mOhm, Single P-Channel, D2PAK. | D2PAK-3 | 418B-04 | 1 | Tape and Reel | 800 | $0.5617 |
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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NTBV5605T4G | P-Channel | Single | 60 | 20 | 2 | 18.5 | 88 | 140 | 13 | 7 | 140 | 730 | 211 | 67 |