NVD5890N: Power MOSFET 40V, 123A, 3.7 mOhm, Single N Channel, DPAK.

Automotive Power MOSFET. 40V, 123A, 3.7 mOhm, Single N Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • Low RDS(on)
  • High current capability
  • AEC-Q101 Qualified
  • 100% Avalanche engergy tested
优势
  • Minimizes conduction losses
  • Provides robust load driving performance
  • Suitable for use in Automotive systems
  • Safeguards against voltage overstress failure
应用
  • Motor Drivers
  • Automotive Pump Drivers
终端产品
  • Automotive Braking systems
  • Automotive Steering systems
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
NVD5890N PSPICE MODELNVD5890N.LIB (1.0kB)0
NVD5890N SABER MODELNVD5890N.SIN (1.0kB)0
NVD5890N SPICE2 MODELNVD5890N.SP2 (1.0kB)0
NVD5890N SPICE3 MODELNVD5890N.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK (SINGLE GAUGE) TO-252369C (34.6kB)F
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
NVD5890N Final DatasheetNVD5890N/D (111.0kB)1
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NVD5890NT4GActiveAEC Qualified PPAP Capable Pb-free Halide freeDPAK-3369C1Tape and Reel2500$0.6399
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NVD5890NT4GN-ChannelSingle40203.51231073.77416404975785490
NVD5890N Final Datasheet (111.0kB) NVD5890N
NVD5890N PSPICE MODEL NVD5890N
NVD5890N SABER MODEL NVD5890N
NVD5890N SPICE2 MODEL NVD5890N
NVD5890N SPICE3 MODEL NVD5890N
DPAK (SINGLE GAUGE) TO-252 NCV8408