Automotive Power MOSFET. 40V, 123A, 3.7 mOhm, Single N Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性
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应用
| 终端产品
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Document Title | Document ID/Size | Revision | Revision Date |
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NVD5890N PSPICE MODEL | NVD5890N.LIB (1.0kB) | 0 | |
NVD5890N SABER MODEL | NVD5890N.SIN (1.0kB) | 0 | |
NVD5890N SPICE2 MODEL | NVD5890N.SP2 (1.0kB) | 0 | |
NVD5890N SPICE3 MODEL | NVD5890N.SP3 (1.0kB) | 0 |
Document Title | Document ID/Size | Revision |
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DPAK (SINGLE GAUGE) TO-252 | 369C (59.1kB) | E |
Document Title | Document ID/Size | Revision | Revision Date |
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NVD5890N Final Datasheet | NVD5890N/D (111.0kB) | 1 |
产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) | ||
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NVD5890NT4G | Active | AEC Qualified PPAP Capable Pb-free Halide free | Power MOSFET 40V, 123A, 3.7 mOhm, Single N Channel, DPAK., Power MOSFET 40 V, 100 A, Single N−Channel | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.6399 |
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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NVD5890NT4G | N-Channel | Single | 40 | 20 | 3.5 | 123 | 107 | 3.7 | 74 | 16 | 40 | 4975 | 785 | 490 |