技术特性| Power Device | IGBT | | VCES [V] | 600 | | IC [A] | 30 | | Vce(sat) [V] | 1.7 | | Reccomended Switching Frequency [kHz] | ～20 | | Isolation Voltage [Vrms] | 1500 | | Storage Temperature (Min.)[°C] | -40 | | Storage Temperature (Max.)[°C] | 125 |
| 产品特点- 3phase DC/AC Inverter
- 600V/30A
- Low Side IGBT Open Emitter
- Built -in Bootstrap Diode
- High Side IGBT Gate Driver(HVIC): SOI (Silicon On Insulator) Process, Drive Circuit, High Voltage Level Shifting, Current Limit for Bootstrap Diode, Control Supply Under-Voltage Locked Out (UVLO)
- Low Side IGBT Gate Driver(LVIC): Drive Circuit, Short Circuit Current Protection (SCP), Control Supply Under Voltage Locked Out (UVLO), Thermal Shutdown (TSD)
- Fault Signal(LVIC) Corresponding to SCP (Low Side IGBT), TSD, UVLO Fault
- Input Interface 3.3V, 5V Line
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