650V 25A Field Stop Trench IGBT RGT50NS65D(TO-262)

罗姆的IGBT(绝缘栅极型双极晶体管)产品为广大的高电压、大电流应用的高效化和节能化做出了贡献。

型号Status封装包装数量最小独立包装数量包装形态RoHS
RGT50NS65DGC9供应中TO-26210001000TubeYes

RGT50NS65D(TO-262) 数据手册 Data Sheet

技术特性
VCES [V]650
IC(100°C)[A]25
VCE(sat) (Typ.) [V]1.65
tsc(Min.) [us]5
Built-in DiodeFRD
Pd [W]194
VGE(th) (Min.)[V]5.0
BVCES (Min.)[V]650
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]175
技术资料下载
产品特点
  • Low Collector-Emitter Saturation Voltage
  • Low Switching Loss
  • Short Circuit Withstand Time 5µs
  • Built in Very Fast & Soft Recovery FRD (RFN-Series)
  • Pb-free Lead Plating; RoHS Compliant
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