650V 25A Field Stop Trench IGBT - RGT50NS65D(TO-262)

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
RGT50NS65DGC9ActiveTO-26210001000TubeYes

RGT50NS65D(TO-262) Data Sheet

Specifications
VCES [V]650
IC(100°C)[A]25
VCE(sat) (Typ.) [V]1.65
tsc(Min.) [us]5
Built-in DiodeFRD
Pd [W]194
VGE(th) (Min.)[V]5.0
BVCES (Min.)[V]650
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]175
Technical Documents
Features
  • Low Collector-Emitter Saturation Voltage
  • Low Switching Loss
  • Short Circuit Withstand Time 5µs
  • Built in Very Fast & Soft Recovery FRD (RFN-Series)
  • Pb-free Lead Plating; RoHS Compliant
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