650V 25A Field Stop Trench IGBT - RGT50NS65D(LPDS)
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| Part Number | Status | Package | Unit Quantity | Minimum Package Quantity | Packing Type | RoHS |
|---|
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| RGT50NS65DGTL | Active | LPDS | 1000 | 1000 | Taping | Yes |
RGT50NS65D(LPDS) Data Sheet
Specifications| VCES [V] | 650 | | IC(100°C)[A] | 25 | | VCE(sat) (Typ.) [V] | 1.65 | | tsc(Min.) [us] | 5 | | Built-in Diode | FRD | | Pd [W] | 194 | | VGE(th) (Min.)[V] | 5.0 | | BVCES (Min.)[V] | 650 | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 175 |
| Technical DocumentsFeatures- Low Collector-Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5µs
- Built in Very Fast & Soft Recovery FRD (RFN-Series)
- Pb-free Lead Plating; RoHS Compliant
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