2ST31A：Low voltage NPN power transistor
The device is manufactured in planar technology with “base island” layout. The resulting transistor shows high gain performance coupled with low saturation voltage.
Key Features
- High switching speed
- Good performances in terms of hFE
linearity
产品规格
Technical Notes & Articles
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| 2ST31A | TO-220AB | Tube | - | - | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| 2ST31A | TO-220AB | Industrial | Ecopack2 | |
