STT13005D:High voltage fast-switching NPN power transistor

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies.

Key Features

  • Integrated antiparallel collector-emitter diode
  • Minimum lot-to-lot spread for reliable operation
  • High voltage capability
  • Very high switching speed
产品规格
DescriptionVersionSize
DS5890: High voltage fast-switching NPN power transistor2.1260 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STT13005D-KSOT-32Poly Bag--NECEAR99CHINA
STT13005DSOT-32Tube0.1621000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STT13005D-KSOT-32IndustrialEcopack1md_ot-wspc-sot-wspc-32_tcot-wspc-bv76s6c.pdf
md_ot-wspc-sot-wspc-32_tcot-wspc-bv76s6c.xml
STT13005DSOT-32IndustrialEcopack1md_ot-wspc-sot-wspc-32_tcot-wspc-bv76s6c.pdf
md_ot-wspc-sot-wspc-32_tcot-wspc-bv76s6c.xml
High voltage fast-switching NPN power transistor STT13005D
md_ot-wspc-sot-wspc-32_tcot-wspc-bv76s6c.pdf STT13005D
md_ot-wspc-sot-wspc-32_tcot-wspc-bv76s6c.xml STT13005D