The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
Key Features
| Description | Version | Size |
|---|---|---|
| DS5890: High voltage fast-switching NPN power transistor | 2.1 | 260 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| STT13005D-K | SOT-32 | Poly Bag | - | - | NEC | EAR99 | CHINA |
| STT13005D | SOT-32 | Tube | 0.162 | 1000 | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| STT13005D-K | SOT-32 | Industrial | Ecopack1 | md_ot-wspc-sot-wspc-32_tcot-wspc-bv76s6c.pdf md_ot-wspc-sot-wspc-32_tcot-wspc-bv76s6c.xml |
| STT13005D | SOT-32 | Industrial | Ecopack1 | md_ot-wspc-sot-wspc-32_tcot-wspc-bv76s6c.pdf md_ot-wspc-sot-wspc-32_tcot-wspc-bv76s6c.xml |
