STT818B:HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR

The device is manufactured in low voltage PNP Planar Technology with \"Base Island\" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • Very low collector to emitter saturation voltage
  • 3 A continuous collector current (IC )
  • DC current gain > 100 (hFE )
产品规格
DescriptionVersionSize
DS2594: High gain low voltage PNP power transistor5.2143 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STT818BSOT23-6LTape And Reel0.15500NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STT818BSOT23-6LIndustrialEcopack2md_kz-wspc-sot-wspc-23-6-wspc-leads-wspc-pmos-wspc-strip_tskzbi01t6f-wspc-(stt818b)-wspc-wcp-wspc-ver2_signed.pdf
md_kz-wspc-sot-wspc-23-6-wspc-leads-wspc-pmos-wspc-strip_tskzbi01t6f-wspc-(stt818b)-wspc-wcp-wspc-ver2.xml
High gain low voltage PNP power transistor STT818B
md_kz-wspc-sot-wspc-23-6-wspc-leads-wspc-pmos-wspc-strip_tskzbi01t6f-wspc-(stt818b)-wspc-wcp-wspc-ver2_signed.pdf STT818B
md_kz-wspc-sot-wspc-23-6-wspc-leads-wspc-pmos-wspc-strip_tskzbi01t6f-wspc-(stt818b)-wspc-wcp-wspc-ver2.xml STT818B