STT818B:HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR

The device is manufactured in low voltage PNP Planar Technology with \"Base Island\" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • Very low collector to emitter saturation voltage
  • 3 A continuous collector current (IC )
  • DC current gain > 100 (hFE )
Product Specifications
DescriptionVersionSize
DS2594: High gain low voltage PNP power transistor5.2143 KB
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STT818BSOT23-6LTape And Reel0.15500NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STT818BSOT23-6LIndustrialEcopack2md_kz-wspc-sot-wspc-23-6-wspc-leads-wspc-pmos-wspc-strip_tskzbi01t6f-wspc-(stt818b)-wspc-wcp-wspc-ver2_signed.pdf
md_kz-wspc-sot-wspc-23-6-wspc-leads-wspc-pmos-wspc-strip_tskzbi01t6f-wspc-(stt818b)-wspc-wcp-wspc-ver2.xml
High gain low voltage PNP power transistor STT818B
md_kz-wspc-sot-wspc-23-6-wspc-leads-wspc-pmos-wspc-strip_tskzbi01t6f-wspc-(stt818b)-wspc-wcp-wspc-ver2_signed.pdf STT818B
md_kz-wspc-sot-wspc-23-6-wspc-leads-wspc-pmos-wspc-strip_tskzbi01t6f-wspc-(stt818b)-wspc-wcp-wspc-ver2.xml STT818B