BD681:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Key Features

  • Good hFE linearity
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • High fT frequency
产品规格
DescriptionVersionSize
DS0882: Complementary power Darlington transistors5.2377 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
BD681SOT-32Tube0.2021000NECEAR99INDIA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
BD681SOT-32IndustrialEcopack1md_ot-wspc-sot-wspc-32_tsot-wspc-bb02s6c.pdf
md_ot-wspc-sot-wspc-32_tsot-wspc-bb02s6c.xml
Complementary power Darlington transistors BD678
md_ot-wspc-sot-wspc-32_tsot-wspc-bb02s6c.pdf BD677
md_ot-wspc-sot-wspc-32_tsot-wspc-bb02s6c.xml BD677