BU508AF:High voltage NPN power transistor for standard definition CRT display

The BU508AF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage.

Key Features

  • Fully insulated power package U.L. compliant
  • State-of-the-art technology:Diffused collector “Enhanced generation”
  • Low base-drive requirement
  • Stable performances versus operating temperature variation
  • High ruggedness
  • Tigh hFE range at operating collector current
产品规格
DescriptionVersionSize
DS5168: High voltage NPN power transistor for standard definition CRT display2.2211 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
BU508AFTO-3PFTube0.9500NECEAR99KOREA (south)
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
BU508AFTO-3PFIndustrialEcopack1md_lz-wspc-to-3pfisowatt-wspc-218_tslz-wspc-bt2416s.pdf
md_lz-wspc-to-3pfisowatt-wspc-218_tslz-wspc-bt2416s.xml
High voltage NPN power transistor for standard definition CRT display BU508AF
md_lz-wspc-to-3pfisowatt-wspc-218_tslz-wspc-bt2416s.pdf BU508AF
md_lz-wspc-to-3pfisowatt-wspc-218_tslz-wspc-bt2416s.xml BU508AF