The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
Key Features
| Description | Version | Size |
|---|---|---|
| DS1564: High voltage fast-switching NPN power transistor | 5.2 | 225 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| BUL128D-B | TO-220AB | Tube | 0.291 | 500 | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| BUL128D-B | TO-220AB | Industrial | Ecopack2 |
