ESDA8V2-1J：EOS and ESD Transil™ protection for charger and battery port

The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages.

Key Features

Complies with the following standards:IEC 61000-4-2 level 4 ±15 kV (air discharge) ±8 kV (contact discharge)MIL STD 883G - Method 3015-7: class 3B HBM (human body model): ≥8kV
Breakdown voltage VBR = 8.2 V
High peak power dissipation: 500 W (8/20 μs waveform)
Unidirectional device
Low leakage current (< 0.5 μA @ 5 V) BenefitsHigh EOS and ESD protection levelHigh integrationSuitable for high density boards
ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge

产品规格

Description	Version	Size
DS6240: EOS and ESD Transil™ protection for charger and battery port	1.1	132 KB

应用手册

Description	Version	Size
AN3353: IEC 61000-4-2 standard testing	1.1	172 KB
AN4022: TVS short pulse dynamic resistance measurement and correlation with TVS clamping voltage during ESD	2.1	362 KB

Technical Notes & Articles

Description	Version	Size
TA0324: ESD protection improvement in cellular handsets	1.2	134 KB
TN1200: Micro-bump Flip Chip: package description and recommendations for use	1.0	280 KB
TN1173: Packing information for IPAD™, protection, rectifiers, thyristors and AC Switches	4.0	330 KB

HW Model & CAD Libraries

Description	Version	Size
ESDA8V2-1J PSpice model (.lib) and symbols (.olb)	1.0	1 KB

简报

Description	Version	Size
HSP series portfolio overview : High-speed port ESD protection	1.0	797 KB
Ultra-low capacitance single-line ESD protection portfolio overview: ‘Ultra Low’ (ULC) and ‘eXtra Low’ (XLC) capacitance ESD protection	1.0	681 KB