LET9120：120W 32V HF to 2GHz LDMOS TRANSISTOR in push-pull package

The LET9120 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz.

Key Features

  • Excellent thermal stability
  • Common source configuration push-pull
  • POUT = 120 W with 18 dB gain @ 860 MHz
  • BeO-free package
产品规格
DescriptionVersionSize
DS6162: RF power transistor from the LdmoST family of n-channel ehancement-mode lateral MOSFETs5.1202 KB
应用手册
DescriptionVersionSize
AN1294: PowerSO-10RF: the first true RF power SMD package3.21 MB
HW Model & CAD Libraries
DescriptionVersionSize
LET9120 ADS model1.0394 KB
简报
DescriptionVersionSize
LET series: The new LDMOS series for applications from 1 MHz to 2 GHz1.0319 KB
宣传册
DescriptionVersionSize
LET series: latest LDMOS series for applications from 1 MHz to 2 GHz1.0617 KB
Software Development Tools
型号制造商Description
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
样片和购买
型号QuantityUnit Price (US$) *PackagePacking TypeECCN (EU)ECCN (US)Country of Origin
LET91201000124.8M246Loose PieceNECEAR99MOROCCO
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
LET9120M246IndustrialEcopack1
RF power transistor from the LdmoST family of n-channel ehancement-mode lateral MOSFETs LET9120
PowerSO-10RF: the first true RF power SMD package PD54003-E
PowerSO-10RF: the first true RF power SMD package LET9120
PowerSO-10RF: the first true RF power SMD package LET9060F
PowerSO-10RF: the first true RF power SMD package LET9060F
Products 产品服务
Manufacturers 生产厂家
联系购买Sales
©1993 - 2024 BDTIC