LET9150：150W 32V HF to 2GHz LDMOS TRANSISTOR in push-pull package
The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz.
Key Features
- Excellent thermal stability
- Common source configuration push-pull
- POUT
= 150 W with 20 dB gain @ 860 MHz
- BeO-free package
产品规格
应用手册
HW Model & CAD Libraries
简报
宣传册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
样片和购买
| 型号 | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| LET9150 | 1000 | 128.7 | M246 | Loose Piece | NEC | EAR99 | MOROCCO |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| LET9150 | M246 | Industrial | Ecopack1 | |
