M48Z35:256 Kbit (32 Kbit x 8) ZEROPOWER® SRAM

The M48Z35/Y ZEROPOWER®RAM is a 32 K x 8, non-volatile static RAM that integrates power-fail deselect circuitry and battery control logic on a single die. The monolithic chip is available in two special packages to provide a highly integrated battery-backed memory solution.

The M48Z35/Y is a non-volatile pin and function equivalent to any JEDEC standard 32 K x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed. The 28-pin 600 mil DIP CAPHAThouses the M48Z35/Y silicon with a long life lithium button cell in a single package.

The 28-pin 330 mil SOIC provides sockets with gold plated contacts at both ends for direct connection to a separate SNAPHAT®housing containing the battery. The unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process. Insertion of the SNAPHAT housing after reflow prevents potential battery damage due to the high temperatures required for device surface-mounting. The SNAPHAT housing is keyed to prevent reverse insertion.

The SOIC and battery packages are shipped separately in plastic anti-static tubes or in tape & reel form.

For the 28-lead SOIC, the battery package (i.e. SNAPHAT) part number is “M4Z28-BR00SH1.”

Key Features

  • Integrated, ultra low power SRAM, power-fail control circuit, and battery
  • READ cycle time equals WRITE cycle time
  • Automatic power-fail chip deselect and WRITE protection
  • WRITE protect voltages: (VPFD = power-fail deselect voltage)
    • M48Z35: VCC = 4.75 to 5.5 V; 4.5 V ≤ VPFD ≤ 4.75 V
    • M48Z35Y: 4.5 to 5.5 V; 4.2 V ≤ VPFD ≤ 4.5 V
  • Self-contained battery in the CAPHAT™ DIP package
  • Packaging includes a 28-lead SOIC and SNAPHAT® top (to be ordered separately)
  • Pin and function compatible with JEDEC standard 32 K x 8 SRAMs
  • SOIC package provides direct connection for a SNAPHAT® top which contains the battery
  • RoHS compliant
    • Lead-free second level interconnect
产品规格
DescriptionVersionSize
DS0523: 256 Kbit (32 Kbit X 8) ZEROPOWER® SRAM10.1408 KB
应用手册
DescriptionVersionSize
AN1011: ST NVRAM 和实时时钟(RTC)产品中使用的电池技术4.0416 KB
AN1009: Negative undershoot NVRAM data corruption2.082 KB
AN1012: 预测NVRAM 和串行RTC 的电池寿命和数据保存期限4.1813 KB
Product Certifications
DescriptionVersionSize
Products Underwriter Laboratories (UL) Information2.1543 KB
Products Underwriter Laboratories (UL) Information2.1162 KB
样片和购买
型号PackagePacking TypeOperating Temperature (°C) (min)Operating Temperature (°C) (max)Unit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
M48Z35-70PC1PDIP 28 .7Tube--11.5241000NECEAR99MALAYSIA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
M48Z35-70PC1PDIP 28 .7IndustrialEcopack1md_n9-wspc-pdip-wspc-28-wspc-.7-wspc-zero-wspc-power_hapck6aa5zx-wspc-(m48z35-70pc1)-wspc-wcp-wspc-ver2_signed.pdf
md_n9-wspc-pdip-wspc-28-wspc-.7-wspc-zero-wspc-power_hapck6aa5zx-wspc-(m48z35-70pc1)-wspc-wcp-wspc-ver2.xml
256 Kbit (32 Kbit X 8) ZEROPOWER® SRAM M48Z35
circuit_diagram_2608_thumbnail.png M48Z35
ST NVRAM 和实时时钟(RTC)产品中使用的电池技术 M4Z28-BR00SH
Negative undershoot NVRAM data corruption M48Z58Y
预测NVRAM 和串行RTC 的电池寿命和数据保存期限 M4Z28-BR00SH
Predicting the battery life and data retention period of NVRAMs and serial RTCs M4Z28-BR00SH
Predicting the battery life and data retention period of NVRAMs and serial RTCs M48Z58Y
md_n9-wspc-pdip-wspc-28-wspc-.7-wspc-zero-wspc-power_hapck6aa5zx-wspc-(m48z35-70pc1)-wspc-wcp-wspc-ver2_signed.pdf M48Z35
md_n9-wspc-pdip-wspc-28-wspc-.7-wspc-zero-wspc-power_hapck6aa5zx-wspc-(m48z35-70pc1)-wspc-wcp-wspc-ver2.xml M48Z35