PD20015-E：15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20015-E’s superior linearity performance makes it an ideal solution for mobile radio applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V
- Plastic package
- ESD protection
- In compliance with the 2002/95/EC european directive
产品规格
应用手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| PD20015-E | PowerSO-10RF (formed lead) | Tube | - | - | NEC | EAR99 | MOROCCO |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| PD20015-E | PowerSO-10RF (formed lead) | Industrial | Ecopack2 | |
