PD20015-E:15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package

The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20015-E’s superior linearity performance makes it an ideal solution for mobile radio applications.

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

Key Features

  • Excellent thermal stability
  • Common source configuration
  • POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V
  • Plastic package
  • ESD protection
  • In compliance with the 2002/95/EC european directive
产品规格
DescriptionVersionSize
DS5530: RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs4.1241 KB
应用手册
DescriptionVersionSize
AN1294: PowerSO-10RF: the first true RF power SMD package3.21 MB
Software Development Tools
型号制造商Description
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
PD20015-EPowerSO-10RF (formed lead)Tube--NECEAR99MOROCCO
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
PD20015-EPowerSO-10RF (formed lead)IndustrialEcopack2
RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs PD20015-E
PowerSO-10RF: the first true RF power SMD package PD54003-E