PD57070S-E:70W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).

Key Features

  • Excellent thermal stability
  • Common source configuration
  • POUT = 70 W with 14.7dB gain @945 MHz/28 V
  • New RF plastic package
产品规格
DescriptionVersionSize
DS4823: RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs2.1515 KB
Software Development Tools
型号制造商Description
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
样片和购买
型号QuantityUnit Price (US$) *PackagePacking TypeECCN (EU)ECCN (US)Country of Origin
PD57070S-E--PowerSO-10RF (straight lead)TubeNECEAR99MOROCCO
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
PD57070S-EPowerSO-10RF (straight lead)IndustrialEcopack2
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs PD57070-E