PD84008L-E:RF Power LDMOS transistor

The PD84008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84008L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package, PowerFLAT™.

Key Features

  • Excellent thermal stability
  • Common source configuration
  • POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V
  • Plastic package
  • ESD protection
  • In compliance with the 2002/95/EC european directive
产品规格
DescriptionVersionSize
DS5616: RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs3.1198 KB
HW Model & CAD Libraries
DescriptionVersionSize
PD84008L-E ADS model1.0313 KB
Software Development Tools
型号制造商Description
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Product Evaluation Tools
型号制造商Description
STEVAL-TDR006V14 W / 400 - 470 MHz reference design using PD84001 + PD84008L-E + LPF
STEVAL-TDR021V15 W, 740 - 950 MHz evaluation board based on PD84008L-E
STEVAL-TDR027V16 W / 380 - 512 MHz evaluation board based on the PD84008L-E
样片和购买
型号QuantityUnit Price (US$) *PackagePacking TypeECCN (EU)ECCN (US)Country of Origin
PD84008L-E--PowerFLAT 5x5 HVTape And ReelNECEAR99MALAYSIA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
PD84008L-EPowerFLAT 5x5 HVIndustrialEcopack2
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs PD84008L-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs PD84008L-E