The PD85035C is a common source N-channel, enhancement-mode lateral Field- Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.
PD85035C boasts the excellent gain, linearity and reliability of STs latest LDMOS technology.
PD85035Cs superior linearity performance makes it an ideal solution for car mobile radio.
Key Features
| Description | Version | Size |
|---|---|---|
| DS5581: RF power transistor, LdmoST family | 2.2 | 199 KB |
| 型号 | 制造商 | Description |
|---|---|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| PD85035C | M243 | Loose Piece | - | - | NEC | EAR99 | MOROCCO |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| PD85035C | M243 | Industrial | Ecopack1 | md_vb-wspc-.230-wspc-x.360-wspc-wide-wspc-2-l-wspc-ldmos-wspc-wflg_mavb20160ys-wspc-(pd85035c).pdf md_vb-wspc-.xml |
